Semiconductor device manufacturing method and semiconductor device manufacturing system
AssigneeTokyo Electron Limited
InventorTatsuya Yamaguchi
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Abstract
A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate;
- performing a predetermined process on the substrate on which the sacrificial film is formed;
- and
- removing the sacrificial film by heating the substrate to depolymerize the polymer,
- wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
A system for manufacturing a semiconductor device, the system comprising:
- a film forming apparatus configured to form a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate;
- a processing apparatus configured to perform a predetermined process on the substrate on which the sacrificial film is formed;
- and
- a heat treatment apparatus configured to remove the sacrificial film by depolymerizing the polymer by heating the substrate subjected to the predetermined process,
- wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
Dependencies are inferred from the claim text.