Deposition of ceramic layers using liquid organometallic precursors
AssigneeX-energy, LLC
InventorHoward Taery Kim
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AssigneeX-energy, LLC
InventorHoward Taery Kim
Estimating the term…
A metal or ceramic layer may be deposited on nuclear materials by chemical vapor deposition using a non-halogenated liquid organometallic metal precursor. The chemical vapor deposition is carried out by a method including steps of introducing nuclear fuel particles into a fluidized bed reactor, and heating the fluidized bed reactor to a desired operating temperature T1. A flow of a carrier gas is initiated through a vaporizer, and the non-halogenated liquid organometallic metal precursor is injected into the vaporizer and vaporized. A first mixture of the carrier gas and the vaporized non-halogenated liquid organometallic metal precursor may be mixed with a gaseous carbon source, a gaseous nitrogen source, a gaseous oxygen source, or a mixture thereof to produce a second mixture; and the second mixture flows into the fluidized bed reactor at operating temperature T1, allowing deposition of a desired ceramic coating on the particles. The non-halogenated liquid organometallic metal precursor may be a compound of Zr, Hf, Nb, Ta, W, V, Ti, or a mixture thereof.
A method of depositing a metal or ceramic layer comprising a metal selected from the group consisting of Zr, Hf, Nb, Ta, W, V, Ti, and mixtures thereof by chemical vapor deposition, comprising:
A method of depositing a metal or ceramic layer by chemical vapor deposition, comprising:
Dependencies are inferred from the claim text.