Semiconductor material based on metal nanowires and porous nitride and preparation method thereof

A semiconductor material based on metal nanowires and porous nitride, comprising:

• a substrate;
• a buffer layer formed on the substrate;
• a composite material layer formed on the buffer layer, comprising:
• a transverse porous nitride template layer;
• and
• a plurality of metal nanowires filled in pores of the transverse porous nitride template layer,
• wherein the transverse porous nitride template layer is n-type doped, and is configured to:
• provide an electrochemical path for the synthesis of metal nanowires and serve as a working electrode;
• wherein a direction in which the nanowires extend is parallel to a surface of the substrate facing the composite material layer;
• wherein a preparing material of the transverse porous nitride template layer is GaN, a preparing material of the metal nanowires is Ag, and a transverse porous GaN layer and Ag nanowires are combined to form the composite material layer, wherein diameters of the pores in a transverse porous GaN layer are 40 nm, lengths of the pores are 150 μm, and diameters of Ag nanowires are 40 nm;
• and
• wherein the semiconductor material based on the Ag nanowires and the transverse porous GaN layer has a light absorptivity greater than 50% and less than 70% in a wavelength range from 400 nm to 800 nm.