Accurate reduced gate-drive current limiter
AssigneeMurata Manufacturing Co., Ltd.
InventorsSatish Kumar Vangara, Antony Christopher Routledge, Gregory Szczeszynski, Xiaowu Sun
Life of this patent
Estimating the term…
Loading patent…
AssigneeMurata Manufacturing Co., Ltd.
InventorsSatish Kumar Vangara, Antony Christopher Routledge, Gregory Szczeszynski, Xiaowu Sun
Estimating the term…
Circuits and methods that limit current through power FETs of power converter to reduce damaging current in-rush events, independent of switching frequency, device mismatches, and PVT variations. Embodiments utilize a closed-loop feedback circuit and/or a calibrated compensation circuit to regulate, substantially independent of frequency, the control voltage VGATE applied to a power FET gate. In a reduced gate-drive mode, connecting a feedback or compensation circuit to the gate of an LDO source-follower FET allows the gate voltage to be regulated to control the LDO output voltage to a final inverter coupled to the gate of a power FET so that VGATE is adjusted to provide a reduced gate-drive to the power FET; connecting to the output of the LDO allows the LDO output voltage to the final inverter to be directly regulated to adjust VGATE; connecting to the gate of the power FET allows VGATE to be directly set.
A gate control circuit for regulating the ON resistance, RON, of a power FET, including:
A gate control circuit for regulating the ON resistance, RON, of a power FET, including:
A method of protecting a power converter, including:
Dependencies are inferred from the claim text.