Dynamic and localized temperature control for epitaxial deposition reactors
AssigneeApplied Materials, Inc.
InventorsSathya Shrinivas Chary, Zhiyuan Ye
Life of this patent
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Abstract
A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being heated by spot heater changes. The change in power provided by the spot heater is dependent on a temperature correction factor applied by the controller.
Claims17
A method of adjusting a temperature profile of a substrate during processing, suitable for use during semiconductor manufacturing, comprising:
- sending a plurality of temperature correction factors to a spot heater controller, the plurality of temperature correction factors obtained by inverting a thickness profile or a plurality of material composition profile measurement values, and normalizing the thickness profile or the plurality of material composition profile measurement values;
- exposing a first angular section of the substrate to a first radiation beam with a first power using a spot heater, the first power determined using a first temperature correction factor of the plurality of temperature correction factors;
- rotating the substrate about a central axis;
- and
- exposing a second angular section of the substrate to a second radiation beam with a second power using the spot heater, the second power determined using a second temperature correction factor of the plurality of temperature correction factors, wherein the second power is different from the first power.
A non-transitory computer-readable medium storing instructions that, when executed by a processor, cause a computer system to perform the steps of:
- determining an angular position of a substrate;
- receiving a temperature correction curve, the temperature correction curve formed using a plurality of temperature correction factors, the plurality of temperature corrections factors determined by measuring a film thickness or a material composition on a test substrate during a calibration operation, inverting the film thickness or the material composition, and normalizing the film thickness or the material composition;
- and
- adjusting a power output of one or more spot heaters using the temperature correction curve, such that the power output of the one or more spot heaters varies as the spot heaters heat a plurality of angular portions of the substrate along a first radial position of the substrate.
Dependencies are inferred from the claim text.