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AssigneesASML Holding N.V., ASML Netherlands B.V.
InventorsJanardan Nath, Christopher John Mason, Duan-Fu Stephen Hsu, Todd R. Downey, Tian Gang
Estimating the term…
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.
A method associated with imaging a pattern, the method comprising:
A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
Dependencies are inferred from the claim text.