Method for forming silicon-phosphorous materials

A method for forming a silicon-phosphorous material on a substrate, comprising:

• exposing the substrate in a processing chamber to a deposition gas comprising a silicon-phosphorous compound during an epitaxial process;
• and
• selectively depositing a film comprising the silicon-phosphorous material on the substrate,
• wherein the silicon-phosphorous material comprises a phosphorous concentration in a range from about 1×1022 atoms/cm3 to about 5×1022 atoms/cm3;
• wherein the silicon-phosphorous material is deposited at a rate of greater than 500 Å/min to about 2,000 Å/min;
• wherein the substrate is heated to a temperature of about 400° C. to about 700° C.;
• wherein the processing chamber is maintained at a pressure of about 20 Torr to about 600 Torr;
• wherein the silicon-phosphorous compound has the chemical formula:
• (R3-vHvSi)xPHyR′z, and
• wherein:
• each instance of R is independently an alkyl;
• each instance of R′ is independently an alkyl;
• v is 0, 1, 2, or 3;
• x is 1, 2, or 3;
• y is 0, 1, or 2;
• and
• z is 0, 1, or 2;
• wherein x+y+z=3.

A method for forming a silicon-phosphorous material on a substrate, comprising:

• exposing the substrate in a processing chamber to a deposition gas comprising a silicon-phosphorous compound during an epitaxial process;
• and
• selectively depositing a film comprising the silicon-phosphorous material on the substrate,
• wherein the silicon-phosphorous material is deposited at a rate of greater than 500 Å/min to about 2,000 Å/min;
• wherein the silicon-phosphorous compound has the chemical formula:
• (R3-vHvSi)3P, and
• wherein:
• each instance of R is independently selected from the group consisting of methyl, ethyl, propyl, butyl, and an isomer thereof;
• v is 0, 1, 2, or 3, and
• wherein the film comprising the silicon-phosphorous material is deposited on a fin structure disposed on the substrate, wherein the fin structure comprises channels, and wherein the silicon-phosphorous material is deposited without amorphization of the channels.