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US 12,338,531 B2Granted
Spatially tunable deposition to compensate within wafer differential bow
AssigneeLam Research Corporation
InventorsFayaz A. Shaikh, Adriana Vintila, Matthew Mudrow, Nick Ray Linebarger, Jr., Xin Yin, James F. Lee, Brian Joseph Williams
Life of this patent
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Abstract
A plasma processing chamber for depositing a film on an underside surface of a wafer, includes a showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer.
Claims20
An apparatus for processing a wafer, the apparatus comprising:
- a shower-pedestal;
- a first plenum located within the shower-pedestal;
- a second plenum located within the shower-pedestal;
- one or more first gas feeds in fluidic communication with the first plenum within the shower-pedestal;
- one or more second gas feeds in fluidic communication with the second plenum within the shower-pedestal;
- a first set of outlets distributed across two first zones on a top surface of the shower-pedestal and in fluidic communication with the first plenum within the shower-pedestal;
- a second set of outlets distributed across one or more second zones on the top surface of the shower-pedestal and in fluidic communication with the second plenum within the shower-pedestal;
- and
- a wafer support mechanism configured to support a wafer over the shower-pedestal such that the wafer is elevated above the top surface of the shower-pedestal, wherein:
- the top surface of the shower-pedestal faces a backside of the wafer,
- the one or more second zones are interposed between the two first zones and separate the two first zones from one another, and
- the two first zones are mirror images of each other about the one or more second zones.
9 more elements
Dependencies are inferred from the claim text.