Semiconductor structure with selective bottom terminal contacting
AssigneeMurata Manufacturing Co., Ltd.
InventorsJulien El Sabahy, Larry Buffle, Stéphane Bouvier, Frédéric Voiron
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Abstract
A semi-conductor structure with selective bottom terminal contacting is described. The semiconductor device comprises a first metal layer disposed over a substrate; a conductive layer disposed over the first metal layer; and a second metal layer disposed over the conductive layer, the second metal layer embedding a porous structure comprising a plurality of pores that extend substantially perpendicularly from a top surface of the porous structure toward the conductive layer, wherein only a subset of the plurality of pores open onto the conductive layer.
Claims14
A method of fabricating an RC device, comprising:
- forming a first metal layer above a substrate;
- forming a conductive layer above the first metal layer;
- forming a second metal layer above the conductive layer;
- forming a first mask layer on top of the second metal layer, the first mask layer having an opening onto the second metal layer;
- anodizing the second metal layer to form a porous structure within the second metal layer, the porous structure underlying the opening of the first mask layer onto the second metal layer and comprising a plurality of pores that extend substantially perpendicularly from a top surface of the porous structure toward the conductive layer;
- forming a second mask layer over the porous structure, the second mask layer having an opening onto a second area of the porous structure;
- etching the bottom ends of a select set of pores of the plurality of pores;
- and
- forming a metal-insulator-metal (MIM) stack in the plurality of pores of the porous structure.
A semiconductor device, comprising:
- a first metal layer disposed over a substrate;
- a conductive layer disposed over the first metal layer;
- and
- a second metal layer disposed over the conductive layer, the second metal layer embedding a porous structure comprising a plurality of pores that extend substantially perpendicularly from a top surface of the porous structure toward the conductive layer, wherein a first subset of the plurality of pores open onto the conductive layer and a second subset of the plurality of pores are plugged at their bottom ends by an oxide plug of the conductive layer, the oxide plug containing an oxide of the material of the conductive layer, and the oxide plug is not conductive.
Dependencies are inferred from the claim text.