Method for manufacturing thin film transistor array substrate and display panel
AssigneeGuangzhou China Star Optoelectronics Semiconductor Display Technology Co., LTd.
InventorsJun Zhao, Bin Zhao, Juncheng Xiao, Shan Li, Wei Wu
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Abstract
The present disclosure provides a method for manufacturing a thin film transistor array substrate and a display panel. The method includes: forming a plurality of dispersed metal oxide grains on a substrate; forming an amorphous metal oxide semiconductor layer in contact with the plurality of metal oxide grains, and at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer; performing an annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.
Claims16
A method for manufacturing a thin film transistor array substrate, wherein the method comprises:
- forming a metal oxide film layer on a substrate, wherein the metal oxide film layer comprises a crystallized metal oxide and an amorphous metal oxide;
- performing a first annealing process on the metal oxide film layer to remove the amorphous metal oxide and retain only the crystallized metal oxide, to obtain a plurality of dispersed and isolated metal oxide grains formed of the crystallized metal oxide on a surface of the substrate, wherein the metal oxide grain has a size greater than or equal to 5 nm and less than or equal to 100 nm;
- forming an amorphous metal oxide semiconductor layer on the surface of the substrate to cover and contact the plurality of the metal oxide grains, wherein the amorphous metal oxide semiconductor layer is between the metal oxide grains in a direction perpendicular to the surface of the substrate, and wherein at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer, the metal elements in the metal oxide semiconductor layer comprises at least three of In, Ga, Zn, and Sn, and the at least one metal element in the metal oxide grain comprises one or two of In, Ga, Zn, and Sn;
- and
- performing a second annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.
A method for manufacturing a thin film transistor array substrate, wherein the method comprises:
- forming a metal oxide film layer on a substrate, wherein the metal oxide film layer comprises a crystallized metal oxide and an amorphous metal oxide;
- performing a first annealing process on the metal oxide film layer to remove the amorphous metal oxide and retain only the crystallized metal oxide, to obtain a plurality of dispersed and isolated metal oxide grains formed of the crystallized metal oxide on a surface of the substrate;
- forming an amorphous metal oxide semiconductor layer on the surface of the substrate to cover and contact the plurality of the metal oxide grains, wherein the amorphous metal oxide semiconductor layer is between the metal oxide grains in a direction perpendicular to the surface of the substrate, and wherein at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer;
- and
- performing a second annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.
Dependencies are inferred from the claim text.