Manufacturing method of a nanowire-based structure and capacitor array component including the structure

A capacitor array component comprising a nanowire structure, said nanowire structure comprising:

• a plurality of islands of conductive material provided on a substrate;
• and
• conductive nanowires each having a first end that contacts an island of conductive material and a second end that extends away from the island of conductive material;
• wherein different groups of the nanowires contact different islands of conductive material, and each island of conductive material comprises an anodic etch barrier layer and performs the function of a current collector for its group of contacting nanowires;
• wherein a first stack of insulating and electrode layers is on a first group of nanowires contacting a first island of conductive material to form a first capacitor, and a second stack of insulating and electrode layers is on a second group of nanowires contacting a second island of conductive material to form a second capacitor electrically isolated from said first capacitor;
• a conductive layer covering the first capacitor;
• a passivation layer covering the conductive layer;
• a first contact in a first opening extending through the passivation layer of the first capacitor and connected to the first island of conductive material on a portion of the first island of conductive material that extends past the first group of nanowires contacting the first island of conductive material;
• and
• a second contact in a second opening extending through the conductive layer and the passivation layer of the first capacitor and connected to the electrode layer of the first stack.