Tunneling transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsGao-Tian Lu, Yang Wei, Shou-Shan Fan, Yue-Gang Zhang
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Abstract
A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.
Claims12
A tunneling transistor, comprising:
- a gate;
- an insulating layer placed on the gate;
- a carbon nanotube located on a surface of the insulating layer away from the gate, wherein only one carbon nanotube is located on the surface of the insulating layer and the carbon nanotube is semiconducting;
- a film-like structure, wherein the film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film;
- a source electrode electrically connected to the film-like structure;
- and
- a drain electrode electrically connected to the carbon nanotube.
Dependencies are inferred from the claim text.