Solid-state imaging device and electronic device
AssigneeSony Semiconductor Solutions Corporation
InventorsTomohiko Shibata, Kiyoshige Tsuji
Life of this patent
Estimating the term…
Abstract
An image sensor (102) includes a photoelectric conversion unit (10) that generates a photoelectric charge, a sense node (SN) (21) that is connected to the photoelectric conversion unit (10) and holds the photoelectric charge generated by the photoelectric conversion unit (10), a discharge transistor (15) for discharging the photoelectric charge held by the sense node (SN) (21) to the outside, and a voltage control unit (114) that controls a voltage value of an off voltage to be applied to a gate of the discharge transistor (15) when the discharge transistor (15) is turned off.
Claims10
A light detecting device comprising:
- a photoelectric conversion unit;
- a first charge holding unit coupled to the photoelectric conversion unit;
- a first transistor including a gate terminal, a first terminal and a second terminal;
- a voltage control circuit coupled to the first transistor;
- a second transistor including a gate terminal, a first terminal and a second terminal, the first charge holding unit being directly electrically connected to the photoelectric conversion unit, the second terminal of the first transistor and the first terminal of the second transistor;
- a second charge holding unit coupled to the second transistor;
- a third transistor coupled to the second charge holding unit;
- a fourth transistor coupled to the second charge holding unit, and
- a fifth transistor coupled to the fourth transistor,
- wherein the first transistor is a P-type metal oxide semiconductor (MOS) transistor.
Dependencies are inferred from the claim text.