US 12,334,913 B2 · DrMOS, integrated circuit, electronic device, and preparation method

Abstract

A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.

Claims19

Dependent claims

A driver metal-oxide-semiconductor field-effect transistor (DrMOS) comprising:

a first die and a second die, wherein
the first die comprises a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor;
the second die comprises a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor;
and
a substrate, and the substrate is configured to carry the first die and the second die;
wherein
a source and the gate of the second switching transistor are in contact with the substrate;
and
the first switching transistor is a laterally diffused metal oxide semiconductor LDMOS transistor, and the second switching transistor is a split gate trench metal oxide semiconductor SGT MOS transistor.

6 more elements

A driver metal-oxide-semiconductor field-effect transistor (DrMOS) preparation method comprising:

separately preparing a first die and a second die, wherein the first die comprises a drive circuit and a first switching transistor, the drive circuit is connected to a gate of the first switching transistor, and the second die comprises a second switching transistor;
and
connecting the drive circuit to a gate of the second switching transistor through a first conductor;
fastening the first die and the second die onto a surface of a substrate such the substrate carries the first die and the second die;
wherein
a source and the gate of the second switching transistor are in contact with the substrate;
and
wherein the first switching transistor is a laterally diffused metal oxide semiconductor LDMOS transistor, and the second switching transistor is a split gate trench metal oxide semiconductor SGT MOS transistor.

5 more elements

Dependencies are inferred from the claim text.

DrMOS, integrated circuit, electronic device, and preparation method

Life of this patent

DrMOS, integrated circuit, electronic device, and preparation method

Life of this patent

Abstract

Claims19