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US 12,334,714 B2Granted
Visible light-emitting device and laser with improved tolerance to crystalline defects and damage
AssigneeThe Board of Trustees of the University of Illinois
InventorsMinjoo Lawrence Lee, Pankul Dhingra
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Abstract
Visible spectrum quantum dot (QD) light emitting sources integrable with integrated silicon photonics include a plurality of epitaxially grown InP QDs within an active region. The light emitting sources include light emitting diodes (LEDs) and semiconductor lasers.
Claims19
A light emission source comprising:
- an active region having a plurality of InP quantum dots (QDs) epitaxially grown therein, the active region operable to convert electrical current into light emission;
- a first barrier layer grown below the active region;
- a second barrier layer grown on top of the active region;
- and
- a first carrier blocking layer grown below the first barrier layer.
2 more elements
A method of manufacturing a visible-wavelength light emission source comprising:
- epitaxially growing a GaAs buffer layer on at least one of a GaAs layer or a GaAs/Si layer;
- epitaxially growing a carrier blocking layer on top of the GaAs buffer layer;
- epitaxially growing a first barrier layer above the carrier blocking layer;
- and
- epitaxially growing a plurality of InP quantum dots within an active region operable to convert electrical current into light emission.
2 more elements
Dependencies are inferred from the claim text.