Methods for forming a vertical cavity surface emitting laser device

A method of forming a bottom emitting vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence, comprising:

• forming, using a metal-organic chemical vapor deposition (MOCVD) process in an MOCVD processing environment during an MOCVD phase of the multiphase growth sequence, an epitaxial structure comprising:
• a first n-doped distributed Bragg reflector (DBR),
• a tunnel junction over the first n-doped DBR, and
• an oxidation aperture (OA) layer and a p-doped DBR over the tunnel junction;
• moving, during a transition period following the MOCVD phase, the epitaxial structure from the MOCVD processing environment to a molecular beam epitaxy (MBE) processing environment;
• and
• forming, using an MBE process in the MBE processing environment during an MBE phase of the multiphase growth sequence and after the transition period:
• an active region over the OA layer and the p-doped DBR, and
• a second n-doped DBR over the active region.

A method of forming a bottom emitting vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence, comprising:

• forming a first portion of an epitaxial structure using a metal-organic chemical vapor deposition (MOCVD) process in an MOCVD processing environment during an MOCVD phase of the multiphase growth sequence;
• moving, during a transition period following the MOCVD phase, the epitaxial structure from the MOCVD processing environment to a molecular beam epitaxy (MBE) processing environment;
• and
• forming a second portion of the epitaxial structure using an MBE process in the MBE processing environment during an MBE phase of the multiphase growth sequence and after the transition period, wherein:
• the first portion of the epitaxial structure comprises a first n-doped distributed Bragg reflector (DBR), a tunnel junction, an oxidation aperture (OA) layer, and a p-doped layer, and
• the second portion of the epitaxial structure comprises an active region and a second n-doped DBR.