Substrate processing method
AssigneeJusung Engineering Co., Ltd.
InventorsJi Hoon Kim, Chul Joo Hwang
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for removing an oxide film formed on a substrate. In accordance with an exemplary embodiment, a substrate processing method that processes a substrate loaded into a chamber, includes: supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber; activating the nitrogen-containing gas in the inner space; supplying a hydrogen-containing gas to the inner space; and supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate.
Claims8
A substrate processing method that processes a substrate loaded into a chamber, comprising:
- supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber;
- activating the nitrogen-containing gas in the inner space;
- supplying a hydrogen-containing gas to the inner space;
- and
- supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate;
- wherein the supplying of the hydrogen-containing gas supplies the hydrogen-containing gas on a path through which the activated nitrogen-containing gas is moved into the chamber,
- wherein at least a portion of the hydrogen-containing gas supplied to the inner space is activated by the activated nitrogen-containing gas on the path through which the activated nitrogen-containing gas is moved into the chamber.
Dependencies are inferred from the claim text.