Remote plasma ultraviolet enhanced deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHai-Dang Trinh, Hsun-Chung Kuang, Fa-Shen Jiang
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Abstract
A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the processing chamber, applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated. The method also includes, while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck.
Claims20
A method of depositing a layer on a semiconductor workpiece, the method comprising:
- placing the semiconductor workpiece on a wafer chuck in a processing chamber;
- heating, by a heating element, the processing chamber to a first temperature for a first time period;
- introducing a first precursor into the processing chamber;
- introducing a second precursor into the processing chamber;
- applying radiation, through a window, to a top surface of the semiconductor workpiece to heat the semiconductor workpiece to a second temperature higher than the first temperature for a second time period shorter than the first time period, the second temperature facilitating deposition of the layer on the top surface of the semiconductor workpiece;
- while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck, and wherein the voltage bias causes at least a portion of the second precursor to accelerate away from the window;
- reducing a pressure within the processing chamber;
- and
- replacing the window while the pressure in the processing chamber is reduced.
A deposition system, comprising:
- a processing chamber comprising an inlet configured to receive at least first and second precursors;
- a wafer chuck in the processing chamber, wherein the wafer chuck is configured to receive and hold a semiconductor workpiece;
- a heating element configured to heat the processing chamber to a first temperature for a first time period;
- a radiation source configured to transmit radiation toward a top surface of the semiconductor workpiece to heat the semiconductor workpiece to a second temperature higher than the first temperature for a second time period shorter than the first time period, the second temperature facilitating deposition of a layer on the top surface of the semiconductor workpiece;
- a bias element configured to apply a voltage bias to the wafer chuck;
- a plasma generator configured to ionize the second precursor and to ignite the second precursor to generate a plasma;
- a window, wherein the radiation is transmitted toward the wafer chuck through the window;
- a pump configured to reduce a pressure within the processing chamber;
- and
- a robotic system configured to replace the window while the pressure in the processing chamber is reduced.
A method of replacing a window of a deposition system, wherein the window is configured to transmit radiation from a radiation source to a wafer chuck configured to hold a semiconductor workpiece within a processing chamber, the method comprising:
- with a pump, reducing a pressure of the processing chamber;
- and
- with a robotic mechanism, replacing the window while the pump maintains the reduced pressure of the processing chamber.
Dependencies are inferred from the claim text.