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US 12,332,561 B2Granted
Emitter oxidation uniformity within a wafer
AssigneeLumentum Operations LLC
InventorsBenjamin Kesler, Ajit Vijay Barve, Guowei Zhao
Life of this patent
Estimating the term…
Abstract
A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.
Claims20
A mask, comprising:
- a plurality of sub-masks having trench features associated with forming a plurality of trenches for vertical cavity surface emitting lasers (VCSELs) on or within a wafer,
- wherein, for each sub-mask of the plurality of sub-masks, a distance between the trench features of the sub-mask is constant, and
- wherein the distance between the trench features of at least one sub-mask, of the plurality of sub-masks, is different from the distance between the trench features of one or more other sub-masks, of the plurality of sub-masks, based on a predicted variation in an oxidation rate of an oxidation layer associated with the wafer.
A mask, comprising:
- a plurality of trench features associated with forming a plurality of trenches for vertical cavity surface emitting lasers (VCSELs) on or within a wafer,
- wherein a distance between the plurality of trench features varies across the mask based on a predicted variation in an oxidation rate of an oxidation layer associated with the wafer.
A method of forming an emitter array, comprising:
- forming an emitter array using a plurality of sub-masks having trench features associated with forming a plurality of trenches for vertical cavity surface emitting lasers (VCSELs) on or within a wafer,
- wherein, for each sub-mask of the plurality of sub-masks, a distance between the trench features of the sub-mask is constant, and
- wherein the distance between the trench features of at least one sub-mask, of the plurality of sub-masks, is different from the distance between the trench features of one or more other sub-masks, of the plurality of sub-masks, based on a predicted variation in an oxidation rate of an oxidation layer associated with the wafer.
Dependencies are inferred from the claim text.