Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

A capacitive microelectromechanical device, comprising:

• a semiconductor substrate comprising a base portion and sidewall portions that extend from the base portion, wherein a recess is defined by the base portion and the sidewall portions;
• a support structure arranged within the recess, wherein the support structure is fixedly connected to the base portion of the semiconductor substrate and a longest dimension of the support structure extends from the base portion in a direction parallel with the sidewall portions;
• an electrode element fixedly connected to the support structure, wherein the electrode element is a plate having a thickness dimension that extends in the direction parallel to the sidewall portions, wherein the support structure extends from the base portion through the electrode element along the thickness dimension;
• a spacer element arranged between and connected directly to both the support structure and the electrode element;
• a spring element arranged within the recess and connected to the support structure;
• a seismic mass arranged within the recess and connected to the support structure by the spring element so that the seismic mass is displaceable with respect to the electrode element in the direction parallel to the sidewall portions;
• and
• wherein the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element, the displacement being measured in the direction parallel to the sidewall portions.