Method for manufacturing a layer of textured aluminum nitride
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsStéphane Cadot, François Martin, Rémy Gassiloud
Life of this patent
Estimating the term…
Abstract
Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MS2 with M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.
Claims16
A method for manufacturing a film of textured AlN comprising the following successive steps:
- a) providing a substrate having an amorphous surface,
- b) forming a polycrystalline nucleation layer of MS2 with M=Mo or W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains having base planes, the base planes being parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, the crystalline domains not being oriented in a same way in the (a, b) plane,
- c) depositing aluminum nitride on the polycrystalline nucleation layer, leading to formation of the film of textured AlN which grows following a crystalline orientation of the polycrystalline nucleation layer in order to form the film of textured AlN having base planes parallel to the base planes of the polycrystalline nucleation layer.
Dependencies are inferred from the claim text.