Contact with a silicide region

A structure comprising:

• a semiconductor region, the semiconductor region comprising a first semiconductor material;
• a metal layer, the metal layer comprising a first metal;
• a silicide region between the semiconductor region and the metal layer, wherein the silicide region comprises a silicide of the first metal and the first semiconductor material;
• a semiconductor nitride region in the semiconductor region, the semiconductor nitride region extending along at least a portion of a sidewall of the silicide region to an upper surface of the semiconductor region;
• and
• a conductive feature extending into the semiconductor nitride region, wherein the conductive feature extends further from the semiconductor region than the semiconductor nitride region.

A structure comprising:

• an active area on a substrate, the active area comprising a source/drain region;
• a dielectric layer over the active area;
• and
• a conductive feature in the dielectric layer, the conductive feature being in electrical contact with the source/drain region, the conductive feature comprising:
• a silicide region at a surface of the source/drain region;
• a first barrier layer on the silicide region, the first barrier layer comprising a transition metal-nitride layer over the silicide region, sidewalls of the dielectric layer being free of the first barrier layer;
• a second barrier layer over the first barrier layer, wherein a surface of the first barrier layer at an interface between the first barrier layer and the second barrier layer comprises oxygen, wherein the surface of the first barrier layer at the interface between the first barrier layer and the second barrier layer has a surface oxygen concentration of 3% or below;
• and
• a conductive material on and contacting the second barrier layer.