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US 12,328,879 B2Granted
Method for manufacturing a two-terminal memory device
AssigneesHyundai Motor Company, Kia Corporation
InventorsUi-Yeon Won, Jong-Seok Lee, Sang-Hyeok Yang
Life of this patent
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Abstract
A method for manufacturing a two-terminal memory device includes: forming an extended drain and a drain layer on a substrate; forming a ferroelectric layer covering the substrate and the extended drain; forming a semiconducting layer on the ferroelectric layer, and forming a source layer connected to the semiconducting layer on the ferroelectric layer.
Claims6
A method for manufacturing a two-terminal memory device, the method comprising:
- forming an extended drain and a drain layer on a substrate;
- forming a ferroelectric layer covering the substrate and the extended drain;
- forming a semiconducting layer on the ferroelectric layer;
- and
- forming a source layer connected to the semiconducting layer on the ferroelectric layer.
2 more elements
Dependencies are inferred from the claim text.