High bandwidth transimpedance amplifier
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorGary M. Madison
Life of this patent
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AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorGary M. Madison
Estimating the term…
Techniques are provided for a transimpedance amplifier (TIA). A TIA implementing the techniques according to an embodiment includes a pre-amplifier stage configured to amplify an input signal. The pre-amplifier stage includes a first P-channel metal oxide semiconductor field effect transistor (MOSFET) (P1), a second P-channel MOSFET (P2), a first N-channel MOSFET (N1), and a second N-channel MOSFET (N2), coupled in series. The gates of P1 and N2 are driven by the input signal. The output of the pre-amplifier stage is provided at a coupling between the drain of P2 and the drain of N1. The pre-amplifier stage also includes an active resistor network configured to provide a variable resistance based on a provided current bias generated from a gain control signal. The active resistor network is coupled between the gate of P1 and the drain of P2. The variable resistance is used to control the gain of the pre-amplifier stage.
A transimpedance amplifier (TIA) circuit comprising:
An imaging system comprising:
A method for fabricating a transimpedance amplifier (TIA), the method comprising:
Dependencies are inferred from the claim text.