Semiconductor device

A semiconductor device comprising:

• a semiconductor chip including
• a first main electrode on one surface thereof, and
• a second main electrode and a gate electrode on another surface thereof;
• a first electrode connected to the one surface of the semiconductor chip via a first bonding material;
• and
• a second electrode connected to the other surface of the semiconductor chip via a second bonding material, wherein
• the first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip,
• the groove penetrates in a thickness direction of the first electrode and has a shape that reaches an end portion of the first electrode when viewed in a plan view,
• the groove overlapping with the semiconductor chip is provided along an end portion of the semiconductor chip in the vicinity of the end portion of the semiconductor chip when viewed in a plan view,
• a first region is a center side region of the semiconductor chip and a second region is an end portion side region of the semiconductor chip, the first region and the second region separated by the groove, and
• the semiconductor chip and the first electrode are connected via the first bonding material in each of the first region and the second region, the first bonding material of the first region and the first bonding material of the second region separated by the groove.