Chemical mechanical polish slurry and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hao Kung, Tung-Kai Chen, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Abstract
Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.
Claims20
A system, comprising:
- a test system comprising a reference electrode, a test electrode, and a voltmeter, the test system configured to determine an electrical potential of a conductive material;
- a holding tank storing a slurry comprising a first volume of a chelator additive and a second volume of an inhibitor additive, the first volume and the second volume being defined by a chelator to inhibitor ratio;
- and
- a chemical mechanical polishing (CMP) device comprising a platen, a wafer carrier, and a slurry dispenser, the CMP device configured to perform a chemical mechanical polishing procedure on a surface of a substrate using the slurry, wherein the chelator to inhibitor ratio is based on the electrical potential of the conductive material, and wherein a material of a conductor disposed within the substrate comprises a same composition as the conductive material.
A system, comprising:
- a polishing pad disposed over a platen;
- a carrier disposed over the polishing pad, the carrier configured to press a wafer against a top surface of the polishing pad, the wafer comprising a conductive material at a surface of the wafer, the conductive material comprising an alloy;
- and
- a slurry dispenser, the slurry dispenser configured to dispense a slurry over the polishing pad, the slurry comprising a chelator to inhibitor ratio based on an electrical potential of the conductive material.
A system, comprising:
- a test system comprising a reference electrode, a test electrode, and a voltmeter, the test system configured to determine an electrical potential of a conductive material;
- a slurry preparation system comprising slurry component storage tanks, a mixing tank, a supply tank, and a slurry, the slurry comprising a chelator to inhibitor ratio based on the electrical potential of the conductive material;
- and a polishing system, the polishing system configured to polish a wafer using the slurry, the polishing system comprising:
- a polishing pad;
- a slurry dispensing system;
- and a carrier configured to secure the wafer.
Dependencies are inferred from the claim text.