# US 12,327,597 B2 · Small-area common-voltage anti-fuse array > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,327,597 B2 - Document ID: US12327597B2 - Status: Granted - Kind: B2 - Application number: 18/480,743 - Filed: 2023-10-04 - Published: 2025-01-09 - Granted: 2025-06-10 - Earliest claimed: 2023-07-06 - Assignees: Yield Microelectronics Corp. - Applicants: Yield Microelectronics Corp. - Inventors: Yu-Ting Huang; Chi-Pei Wu - Web page: https://patentgrep.com/patent/US12327597B2 ## CPC - G11C 17/16: using electrically-fusible links - G11C 8/08: Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines - G11C 17/18: Auxiliary circuits, e.g. for writing into memory - H10B 20/25: One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links - H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive} - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A small-area common-voltage anti-fuse array includes word lines, select lines, common-voltage lines, and anti-fuse elements. The word lines include a first word line and a second word line. The select lines are perpendicular to the common-voltage lines and the word lines. The select lines include a first select line. The common-voltage lines are directly coupled together. The common-voltage lines include a first common-voltage line and a second common-voltage line. Each anti-fuse element includes a first anti-fuse memory cell coupled to the first word line, the first select line, and the first common-voltage line and a second anti-fuse memory cell coupled to the second word line, the first select line, and the second common-voltage line. ## Claims ### Claim 1 A small-area common-voltage anti-fuse array comprising: a plurality of word lines, arranged in parallel, comprising a first word line and a second word line; a plurality of select lines arranged in parallel, wherein the plurality of select lines perpendicular to the plurality of word lines comprise a first select line; a plurality of common-voltage lines arranged in parallel, wherein the plurality of common-voltage lines perpendicular to the plurality of select lines are directly coupled together, the plurality of common-voltage lines comprise a first common-voltage line and a second common-voltage line, and the first word line and the second word line are respectively close to the first common-voltage line and the second common-voltage line; and a plurality of anti-fuse elements each coupled to two of the plurality of word lines, one of the plurality of select lines, and two of the plurality of common-voltage lines, wherein each of the plurality of anti-fuse elements comprises: a first anti-fuse memory cell coupled to the first word line, the first select line, and the first common-voltage line; and a second anti-fuse memory cell coupled to the second word line, the first select line, and the second common-voltage line. ### Claim 2 (depends on 1) The small-area common-voltage anti-fuse array according to claim 1, wherein the first anti-fuse memory cell and the second anti-fuse memory cell are arranged symmetric to each other. ### Claim 3 (depends on 2) The small-area common-voltage anti-fuse array according to claim 2, wherein the first anti-fuse memory cell and the second anti-fuse memory cell are formed in a semiconductor region having a first conductivity type, and the first anti-fuse memory cell comprises: a first gate dielectric block formed on the semiconductor region and arranged between the first word line and the semiconductor region; a first anti-fuse gate formed on the first gate dielectric block and coupled to the first common-voltage line, wherein the first anti-fuse gate is closer to the first common-voltage line than the first word line; and a first ion doped region, a second ion doped region, and a third ion doped region, formed in the semiconductor region, having a second conductivity type opposite to the first conductivity type, wherein the first ion doped region and the second ion doped region are respectively formed on two opposite side of the semiconductor region, which is directly arranged under the first word line, the second ion doped region and the third ion doped region are respectively formed on two opposite side of the semiconductor region, which is directly arranged under the first anti-fuse gate, and the first ion doped region is coupled to the first select line. ### Claim 4 (depends on 3) The small-area common-voltage anti-fuse array according to claim 3, wherein the second anti-fuse memory cell comprises: a second gate dielectric block formed on the semiconductor region and arranged between the second word line and the semiconductor region; a second anti-fuse gate formed on the second gate dielectric block and coupled to the second common-voltage line, wherein the second anti-fuse gate is closer to the second common-voltage line than the second word line; and a fourth ion doped region, a fifth ion doped region, and a sixth ion doped region, formed in the semiconductor region, having a second conductivity type, wherein the fourth ion doped region and the fifth ion doped region are respectively formed on two opposite side of the semiconductor region, which is directly arranged under the second word line, the fifth ion doped region and the sixth ion doped region are respectively formed on two opposite side of the semiconductor region, which is directly arranged under the second anti-fuse gate, and the fourth ion doped region is coupled to the first select line. ### Claim 5 (depends on 4) The small-area common-voltage anti-fuse array according to claim 4, wherein the first conductivity type is a P type and the second conductivity type is an N type. ### Claim 6 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the first anti-fuse memory cell is selected to perform a writing activity, the first common-voltage line is coupled to a high voltage, the first word line is coupled to the high voltage or a middle voltage, and the first select line is coupled to a grounding voltage, the high voltage is higher than the middle voltage, and the middle voltage is higher than the grounding voltage. ### Claim 7 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the first anti-fuse memory cell is not selected to perform a writing activity, the first common-voltage line is coupled to a high voltage, the first word line is coupled to a grounding voltage, and the first select line is coupled to a biasing voltage or electrically floating, the high voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 8 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the first anti-fuse memory cell is selected to perform a reading activity, the first common-voltage line is coupled to a grounding voltage, the first word line is coupled to a middle voltage, and the first select line is coupled to a biasing voltage, the middle voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 9 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the first anti-fuse memory cell is not selected to perform a reading activity, the first common-voltage line is coupled to a grounding voltage, the first word line is coupled to the grounding voltage, and the first select line is electrically floating. ### Claim 10 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the second anti-fuse memory cell is selected to perform a writing activity, the second common-voltage line is coupled to a high voltage, the second word line is coupled to the high voltage or a middle voltage, and the first select line is coupled to a grounding voltage, the high voltage is higher than the middle voltage, and the middle voltage is higher than the grounding voltage. ### Claim 11 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the second anti-fuse memory cell is not selected to perform a writing activity, the second common-voltage line is coupled to a high voltage, the second word line is coupled to a grounding voltage, and the first select line is coupled to a biasing voltage or electrically floating, the high voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 12 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the second anti-fuse memory cell is selected to perform a reading activity, the second common-voltage line is coupled to a grounding voltage, the second word line is coupled to a middle voltage, and the first select line is coupled to a biasing voltage, the middle voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 13 (depends on 5) The small-area common-voltage anti-fuse array according to claim 5, wherein when the second anti-fuse memory cell is not selected to perform a reading activity, the second common-voltage line is coupled to a grounding voltage, the second word line is coupled to the grounding voltage, and the first select line is electrically floating. ### Claim 14 (depends on 4) The small-area common-voltage anti-fuse array according to claim 4, wherein the first conductivity type is an N type and the second conductivity type is a P type. ### Claim 15 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the first anti-fuse memory cell is selected to perform a writing activity, the first common-voltage line is coupled to a grounding voltage, the first word line is coupled to the grounding voltage or a middle voltage, and the first select line is coupled to a high voltage, the high voltage is higher than the middle voltage, and the middle voltage is higher than the grounding voltage. ### Claim 16 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the first anti-fuse memory cell is not selected to perform a writing activity, the first common-voltage line is coupled to a grounding voltage, the first word line is coupled to a high voltage, and the first select line is coupled to a biasing voltage or electrically floating, the high voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 17 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the first anti-fuse memory cell is selected to perform a reading activity, the first common-voltage line is coupled to a high voltage, the first word line is coupled to a middle voltage, and the first select line is coupled to a biasing voltage, the middle voltage is lower than the biasing voltage, and the high voltage is higher than the biasing voltage. ### Claim 18 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the first anti-fuse memory cell is not selected to perform a reading activity, the first common-voltage line is coupled to a high voltage, the first word line is coupled to the high voltage, and the first select line is electrically floating. ### Claim 19 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the second anti-fuse memory cell is selected to perform a writing activity, the second common-voltage line is coupled to a grounding voltage, the second word line is coupled to the grounding voltage or a middle voltage, and the first select line is coupled to a high voltage, the high voltage is higher than the middle voltage, and the middle voltage is higher than the grounding voltage. ### Claim 20 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the second anti-fuse memory cell is not selected to perform a writing activity, the second common-voltage line is coupled to a grounding voltage, the second word line is coupled to a high voltage, and the first select line is coupled to a biasing voltage or electrically floating, the high voltage is higher than the biasing voltage, and the biasing voltage is higher than the grounding voltage. ### Claim 21 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the second anti-fuse memory cell is selected to perform a reading activity, the second common-voltage line is coupled to a high voltage, the second word line is coupled to a middle voltage, and the first select line is coupled to a biasing voltage, the middle voltage is lower than the biasing voltage, and the high voltage is higher than the biasing voltage. ### Claim 22 (depends on 14) The small-area common-voltage anti-fuse array according to claim 14, wherein when the second anti-fuse memory cell is not selected to perform a reading activity, the second common-voltage line is coupled to a high voltage, the second word line is coupled to the high voltage, and the first select line is electrically floating. ### Claim 23 (depends on 4) The small-area common-voltage anti-fuse array according to claim 4, wherein the semiconductor region is a semiconductor substrate. ### Claim 24 (depends on 4) The small-area common-voltage anti-fuse array according to claim 4, wherein the semiconductor region is a doped well and the doped well is formed in a semiconductor substrate.