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US 12,325,934 B2Granted
Single-crystal silicon carbide wafer, and single-crystal silicon carbide ingot
AssigneeCentral Glass Company, Limited
InventorsTomonori Umezaki, Kazuto Kumagai
Life of this patent
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Abstract
A single-crystal silicon carbide wafer of the present invention includes boron at a concentration of 1.0×1016 atoms/cm3 or less, and a region where a misorientation in a crystal plane of the single-crystal silicon carbide wafer (31) is 50 arcsec or less is present on the surface. An area of the region is one fourth or more of an area of the surface of the single-crystal silicon carbide wafer.
Claims20
A single-crystal silicon carbide wafer,
- wherein boron is included at a concentration of 1.0×1016 atoms/cm3 or less in the single-crystal silicon carbide wafer,
- a region where a misorientation in a crystal plane of the single-crystal silicon carbide wafer is 50 arcsec or less is present on a surface of the single-crystal silicon carbide wafer,
- the region includes a center of the surface, and
- an area of the region is one fourth or more of an area of the surface.
1 more element
A single-crystal silicon carbide ingot having a substantially circular columnar shape or a substantially polygonal columnar shape, wherein
- boron is included at a concentration of 1.0×1016 atoms/cm3 or less in a wafer cut perpendicular to a crystal growth direction,
- a region where a misorientation in a crystal plane of the single-crystal silicon carbide wafer is 50 arcsec or less is present on a surface of the wafer,
- the region includes a center of the surface, and
- an area of the region is one fourth or more of an area of the surface.
1 more element
Dependencies are inferred from the claim text.