Chemical mechanical polishing apparatus and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShich-Chang Suen, Liang-Guang Chen, Kei-Wei Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShich-Chang Suen, Liang-Guang Chen, Kei-Wei Chen
Estimating the term…
A polishing platform of a polishing apparatus includes a platen, a polishing pad, and an electric field element disposed between the platen and the polishing pad. The polishing apparatus further includes a controller configured to apply voltages to the electric field element. A first voltage is applied to the electric field element to attract charged particles of a polishing slurry toward the polishing pad. The attracted particles reduce overall topographic variation of a polishing surface presented to a workpiece for polishing. A second voltage is applied to the electric field element to attract additional charged particles of the polishing slurry toward the polishing pad. The additional attracted particles further reduce overall topographic variation of the polishing surface presented to the workpiece. A third voltage is applied to the electric field element to repel charged particles of the polishing slurry away from the polishing pad for improved cleaning thereof.
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.