US 12,324,295 B2Granted

Complex nanostructure forming a bidirectional nanostructure multiplexer or artificial neuron

OwnerJerry D. Harthcockinventor

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Abstract

A complex nanostructure, which includes a first nanostructure component having at least one aperture in a side thereof; at least one second nanostructure component having a first end and a second end, wherein the first end of each of the at least one second nanostructure is inserted through a corresponding one of the at least one aperture in the first nanostructure, thereby forming at least one junction. Embodiments of the complex nanostructure include a bifurcated nanostructure transistor constructed of linear carbon nanotubes, a multiplexer constructed of a circular carbon nanotube and multiple linear carbon nanotubes, and an information unfolder constructed of linear or a combination of linear and circular carbon nanotubes. The nanotubes may optionally be decorated with genetic material such as single-strand or double-strand human DNA segments and/or may be modified by e-beam or ozone gas to add defects into the nanotubes to alter electrical/functional characteristics.

Claims21

Dependent claims

A complex nanostructure forming a bidirectional nanostructure multiplexer, said complex nanostructure comprising:

a circular carbon nanotorus comprising a first carbon nanotube formed into a circle thereby forming a circular carbon nanotube, the circular carbon nanotube having a plurality of apertures in a side thereof facing radially outward from a center of the nanotorus;
a plurality of linear carbon nanotubes having first and second ends and a diameter smaller than a diameter of the circular carbon nanotube, wherein the first end of each of the plurality of linear carbon nanotubes is inserted through one of the plurality of apertures in the circular carbon nanotube, thereby forming a plurality of junctions;
wherein one of the plurality of linear carbon nanotubes forms an axon of the bidirectional nanostructure multiplexer while the remaining linear carbon nanotubes form a plurality of dendrites of the bidirectional nanostructure multiplexer;
voltage means for creating at least one difference in potential between the second end of the linear carbon nanotube forming the axon and at least one of the second ends of the linear carbon nanotubes forming the plurality of dendrites;
and
wherein, when at least one of the plurality of linear carbon nanotubes is of a semiconducting variety, the nanostructure further comprises gate means for forming at least one electrical field in proximity to the at least one semiconducting linear carbon nanotube, said at least one electrical field being sufficiently strong to enable current to flow through the bidirectional nanostructure multiplexer in a direction from higher potential to lower potential.

3 more elements

A complex nanostructure forming a bidirectional nanostructure multiplexer, said complex nanostructure comprising:

a first hollow nanotube formed into a circle thereby forming a circular hollow nanotube, the circular hollow nanotube having at least two apertures made in a side thereof facing outward from a center of the circle;
a second hollow nanotube having a first end and a second end and having a diameter smaller than a diameter of a first of said apertures, wherein the first end of the second hollow nanotube is inserted through the first of said apertures into an interior of the circular hollow nanotube, thereby forming a first junction;
and
at least one third hollow nanotube having a first end and a second end and having a diameter smaller than a diameter of at least one second of said apertures, wherein the first end of the at least one third hollow nanotube is inserted through the at least one second of said apertures into the interior of the circular hollow nanotube, thereby forming at least one second junction;
wherein the second hollow nanotube forms an axon of the bidirectional nanostructure multiplexer and the at least one third hollow nanotube forms at least one dendrite of the bidirectional nanostructure multiplexer;
voltage means for creating at least one difference in potential between the second end of the second hollow nanotube forming the axon and the second end of the at least one third hollow nanotube forming the at least one dendrite;
and
wherein, when the second hollow nanotube or the at least one third hollow nanotube is of a semiconducting variety, the nanostructure further comprises gate means for forming at least one electrical field in proximity to the second hollow nanotube or the at least one third semiconducting hollow nanotube, said at least one electrical field being sufficiently strong to enable current to flow through the bidirectional nanostructure multiplexer in a direction from higher potential to lower potential.

5 more elements

A complex nanostructure forming a bidirectional nanostructure multiplexer, said complex nanostructure comprising:

a first hollow nanotube formed into a circle thereby forming a circular hollow nanotube, the circular hollow nanotube having at least two apertures made in a side thereof facing outward from a center of the circle;
a genetic material wire having a first end and a second end and having a diameter smaller than a diameter of a first of said apertures, wherein the first end of the wire is inserted through the first of said apertures into an interior of the circular hollow nanotube, thereby forming a first junction;
and
at least one second hollow nanotube having a first end and a second end and having a diameter smaller than a diameter of at least one second of said apertures, wherein the first end of the at least one second hollow nanotube is inserted through the at least one second of said apertures into the interior of the circular hollow nanotube, thereby forming at least one second junction;
wherein the genetic material wire forms an axon of the bidirectional nanostructure multiplexer and the at least one second hollow nanotube forms at least one dendrite of the bidirectional nanostructure multiplexer;
voltage means for creating at least one difference in potential between the second end of the genetic material wire forming the axon and the second end of the at least one second hollow nanotube forming the at least one dendrite;
and
wherein, when the at least one second hollow nanotube is of a semiconducting variety, the nanostructure further comprises gate means for forming at least one electrical field in proximity to the at least one second semiconducting hollow nanotube, said at least one electrical field being sufficiently strong to enable current to flow through the bidirectional nanostructure multiplexer in a direction from higher potential to lower potential.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/350,805Filed 17 Jun 2021 · us provisional application
Priority: 20 Jul 2020
Published: US 2022/0376193 A124 Nov 2022
Granted: 3 Jun 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

G11C 13/025
Using elements whose operation depends upon chemical change: using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
G11C 11/54
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor: using elements simulating…
H10K 10/00
Organic devices specially adapted for rectifying, amplifying, oscillating or switching
H10K 85/221
Carbon compounds, e.g. carbon nanotubes or fullerenes: carbon nanotubes