Charge pumps, logic circuits including charge pumps, logic devices including logic circuits, and methods of operating logic circuits
AssigneeGlobalFoundries U.S. Inc.
InventorsSantosh Sharma, Mei Yu Soh
Life of this patent
Estimating the term…
Abstract
A GaN logic circuit may include an input node receiving an input voltage, a first pull up transistor pulling up an output voltage in response to the input voltage, and a first depletion mode transistor having a first gate to which a first gate voltage is applied and a second gate to which a second gate voltage is applied. The first depletion mode transistor may control the first pull up transistor in response to a gate voltage difference between the first gate voltage and the second gate voltage. The logic device may further include a capacitor having a first end coupled to the first depletion mode transistor and a second end coupled to the first pull up transistor.
Claims20
A charge pump for a GaN logic circuit, comprising:
- a first transistor configured to pull down an output voltage in response to an input voltage having a first level and pull up the output voltage in response to the input voltage having a second level;
- and
- a second transistor having a first gate, a second gate, and an output terminal coupled to a gate of the first transistor and being configured to provide a first saturation current therethrough,
- wherein the second transistor is configured to adjust the first saturation current therethrough by a second saturation current flowing into the first gate of the second transistor in response to the input voltage having the second level.
A GaN logic circuit, comprising:
- an input node configured to receive an input voltage;
- a first pull up transistor configured to pull up an output voltage in response to the input voltage;
- a first depletion mode transistor having a first gate to which a first gate voltage is applied and a second gate to which a second gate voltage is applied, the first depletion mode transistor configured to control the first pull up transistor by adjusting a first saturation current through the first depletion mode transistor in response to a gate voltage difference between the first gate voltage and the second gate voltage;
- a capacitor having a first end coupled to the first depletion mode transistor and a second end coupled to the first pull up transistor;
- and
- a first current source configured to discharge a second saturation current to ground when the input voltage has a first level, and to provide the second saturation current to the first depletion mode transistor to adjust the gate voltage difference when the input voltage has a second level.
A logic device, comprising:
- a logic gate configured to receive a pair of input signals and performs a logic operation on the received input signals to generate an intermediate signal;
- and
- a GaN inverter configured to receive the intermediate signal and generate an output signal, the inverter comprising:
- an input node configured to receive the intermediate signal;
- a first pull up transistor configured to pull up the output signal in response to the intermediate signal;
- a depletion mode transistor having a first gate to which a first gate voltage applies and a second gate to which a second gate voltage applies, the depletion mode transistor configured to control the first pull up transistor in response to a gate voltage difference between the first gate voltage and the second gate voltage;
- a capacitor having a first end coupled to the depletion mode transistor and a second end coupled to the first pull up transistor;
- and
- a second pull up transistor configured to pull up a voltage at the first end of the capacitor to a power supply voltage when the intermediate signal has a first level, and make the first end of the capacitor float when the intermediate signal has a second level.
Dependencies are inferred from the claim text.