Optical gain materials for high energy lasers and laser illuminators and methods of making and using same
AssigneeTexas Tech University System
InventorsHongxing Jiang, Zhenyu Sun, Yaqiong Yan, Jing Li, Jingyu Lin
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Abstract
Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×1018 atoms/cm3 and 1×1022 atoms/cm3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.
Claims23
A core-cladding planar waveguide (PWG) structure comprising:
- (a) a core layer comprising Er:GaN, wherein the core layer has a uniform Er doping concentration;
- (b) a first GaN layer comprising undoped GaN;
- and
- (c) a second GaN layer comprising undoped GaN, wherein the core layer is between the first GaN layer and the second GaN layer;
- (d) a first transition layer that is between a first side of the first GaN layer and a first side of the core layer, wherein
- (i) a first side of the first transition layer is adjacent the first side of the first GaN layer,
- (ii) a second side of the first transition layer is adjacent the first side of the core layer, and
- (iii) Er doping of the first transition layer is increasing in concentration from the first side of the first transition layer to the second side of the first transition layer;
- and
- (e) a second transition layer that is between a first side of the second GaN layer and a second side of the core layer, wherein
- (i) a first side of the second transition layer is adjacent the second side of the core layer,
- (ii) a second side of the second transition layer is adjacent the first side of the second GaN layer, and
- (iii) Er doping of the second transition layer is decreasing in concentration from the first side of the second transition layer to the second side of the second transition layer.
A core-cladding planar waveguide (PWG) structure comprising:
- (a) a core strip comprising Er:GaN, wherein
- (i) the core strip has a longitudinal axis, and
- (ii) the core strip has a uniform Er doping concentration;
- and
- (b) a GaN layer of undoped GaN that surrounds the core strip along the longitudinal axis;
- and
- (c) a transition layer that is between the GaN layer and the core strip, wherein
- ((i) a first side of the transition layer is adjacent the GaN layer along the longitudinal axis;
- ((ii) a second side of the transition layer is adjacent the core strip;
- and
- ((iii) Er doping of the transition layer is increasing in concentration between the first side of the transition layer to the second side of the transition layer.
A core-cladding planar waveguide (PWG) structure comprising:
- (a) a core strip comprising Er:GaN, wherein
- (i) the core strip has a longitudinal axis, and
- (ii) the core strip has a uniform Er doping concentration;
- and,
- (b) a first layer of AlxGa1-xN that surrounds the core strip along the longitudinal axis, wherein x is between 0 and 1, inclusive;
- and
- (c) a transition layer between the core strip and the first layer, wherein the transition layer has an Er doping concentration that increases between (i) a first surface of the first transition layer adjacent to the first layer, and (ii) a second surface of the transition layer adjacent the core strip.
Dependencies are inferred from the claim text.