Bonding method for copper-copper metal with hydrazine hydrate
AssigneeAnhui University
InventorsWenhua Yang, Xin Huang, Chao Xie, Zhixiang Huang
Life of this patent
Estimating the term…
Abstract
The present disclosure belongs to the technical field of three-dimensional packaging, and in particular relates to a bonding method for a copper-copper metal. The bonding method includes: subjecting a copper-plated surface of a clean copper-plated substrate to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain a copper-plated substrate to be bonded, where the copper-plated surface is kept at 50° C. to 90° C.; and subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at 200° ° C. to 300° ° C. under the protective atmosphere.
Claims11
A bonding method for a copper-copper metal, comprising the following steps:
- providing copper-plated substrates;
- subjecting copper-plated surfaces of clean copper-plated substrates to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain copper-plated surfaces to be bonded, wherein the clean copper-plated substrates are kept at a temperature of 50° C. to 90° C. during the pretreatment;
- and
- subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at a temperature of 200° C. to 300° C. under the protective atmosphere,
- wherein the copper-plated substrates are selected from the group consisting of copper-plated silicon and coper-plated silicon carbide.
Dependencies are inferred from the claim text.