Semiconductor device and laser marking method
AssigneeNuvoton Technology Corporation Japan
InventorsKosuke Masuzawa, Hiroshi Yoshida
Life of this patent
Estimating the term…
Abstract
A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device including: a semiconductor substrate; and a metal layer that is disposed on the semiconductor substrate and is exposed to outside. One or more marks are provided on an exposed surface of the metal layer. The one or more marks each include an outline portion defining an outline of the mark, and a central portion located inward of the outline portion. In a plan view of the exposed surface of the metal layer, the outline portion has a color different from at least one of a color of the central portion or a color of a base portion that is a portion of the exposed surface of the metal layer on which the one or more marks are not provided.
Claims13
A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
- a semiconductor substrate;
- and
- a metal layer that is disposed on the semiconductor substrate and is exposed to outside,
- wherein one or more marks are provided on an exposed surface of the metal layer,
- the one or more marks each include an outline portion defining an outline of the mark, and a central portion located inward of the outline portion,
- a surface oxygen content of the metal layer in the outline portion is higher than a surface oxygen content of the metal layer in the central portion,
- a main component of the metal layer is at least one of nickel, magnesium, aluminum, chrome, or copper,
- the outline portion and the central portion are exposed, and
- the metal layer has a thickness of at least 2 μm.
A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
- a semiconductor substrate;
- and
- a metal layer that is disposed on the semiconductor substrate and is exposed to outside,
- wherein one or more marks are provided on an exposed surface of the metal layer,
- the one or more marks each include an outline portion defining an outline of the mark, and a central portion located inward of the outline portion,
- a surface light absorption coefficient of the metal layer in the outline portion is different from a surface light absorption coefficient of the metal layer in the central portion,
- a main component of the metal layer is at least one of nickel, magnesium, aluminum, chrome, or copper,
- the outline portion and the central portion are exposed, and
- the metal layer has a thickness of at least 2 μm.
A laser marking method for providing a mark on an exposed surface of a metal layer that contains at least one of nickel, magnesium, aluminum, chrome, or copper and has a thickness of at least 2 μm, the laser marking method comprising:
- sequentially pulse radiating a laser beam to the exposed surface of the metal layer under a prescribed condition to cause a first action and a second action in parallel, and providing the mark including an outline portion and a central portion,
- wherein the first action includes increasing a degree of oxidization of the outline portion defining an outline of the mark, compared to a base portion that is in the exposed surface of the metal layer and unaffected by the radiation of the laser beam, and
- the second action includes decreasing a degree of oxidization of the central portion of the mark located inward of the outline portion, compared to the base portion in the exposed surface of the metal layer.
Dependencies are inferred from the claim text.