Large die wafer, large die and method of forming the same

A large die wafer, comprising a plurality of large dies each having a size greater than a size of a maximum field of exposure of a stepper, each of the large dies comprising:

• at least two die portions to be stitched together, each of the die portions comprising a main die region and dummy dicing margins surrounding the main die region, each of the die portions having a size that is smaller than or equal to the size of the maximum field of exposure of the stepper, the die portions each comprising a substrate, a dielectric layer on the substrate and a first metal layer embedded in the dielectric layer, the first metal layer comprising at least to-be-interconnected metal layers for interconnection of the die portions to be stitched together;
• and
• a second metal layer comprising at least inter-die interconnecting metal layers crossing the dummy dicing margins between adjacent die portions and coming into electrical connection with the to-be-interconnected metal layers of the adjacent die portions;
• wherein the first metal layer further comprises leading-out metal layers in the main die region, wherein the second metal layer further comprises intra-die metal layers in the main die region, and wherein in each die portion, the intra-die metal layers are electrically connected to the leading-out metal layers along a thickness direction of the die portion, and
• wherein the first metal layer further comprises first mark metal layers, the to-be-interconnected metal layers, the leading-out metal layers and the first mark metal layers of the first metal layer are formed in a same metal layer.

A large die, having a size greater than a size of a maximum field of exposure of a stepper, the large die comprising:

• at least two die portions to be stitched together, each of the die portions comprising a main die region and dummy dicing margins surrounding the main die region, each of the die portions having a size that is smaller than or equal to the size of the maximum field of exposure of the stepper, the die portions each comprising a substrate, a dielectric layer on the substrate and a first metal layer embedded in the dielectric layer, the first metal layer comprising at least to-be-interconnected metal layers for interconnection of the die portions to be stitched together;
• and
• a second metal layer comprising at least inter-die interconnecting metal layers crossing the dummy dicing margins between adjacent die portions and coming into electrical connection with the to-be-interconnected metal layers of the adjacent die portions;
• wherein the first metal layer further comprises leading-out metal layers in the main die region, wherein the second metal layer further comprises intra-die metal layers in the main die region, and wherein in each die portion, the intra-die metal layers are electrically connected to the leading-out metal layers along a thickness direction of the die portion, and
• wherein the first metal layer further comprises first mark metal layers, the to-be-interconnected metal layers, the leading-out metal layers and the first mark metal layers of the first metal layer are formed in a same metal layer.