Sensor element and method for producing a sensor element

A method for producing a sensor element, the method comprising:

• providing a carrier material for forming a carrier;
• forming an electrically insulating layer on a top side of the carrier;
• forming at least two electrodes on the carrier;
• applying a functional material to a partial region of the at least two electrodes to form a functional layer;
• sintering the functional layer;
• applying a protective layer to a top side of the sensor element, the protective layer completely covering the top side except for two partial regions, the partial regions being arranged over areal end regions of the at least two electrodes to which contact pads are subsequently applicable;
• forming the contact pads in the partial regions free of the protective layer for electrical contacting of the sensor element;
• separating sensor elements by sawing with a diamond saw or by plasma etching so that components are not yet finally separated;
• grinding the sensor elements from a bottom side, wherein a material is removed from a back side of the carrier to a defined final component thickness by grinding, wherein the carrier is a Si-wafer, and wherein the components are separated;
• and
• optionally plasma etching of the bottom side of the Si-wafer to reduce micro-cracks.

A sensor element comprising:

• at least one carrier having a top side and a bottom side, the top side being electrically insulating;
• at least one functional layer comprising a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier;
• at least two electrodes arranged on the carrier at a distance from one another, wherein each electrode has a plurality of electrode fingers, and wherein the electrode fingers of the two electrodes are arranged alternately with respect to each other;
• and
• at least two contact pads configured for electrically contacting the sensor element,
• wherein a respective contact pad is arranged directly on a partial region of one of the at least two electrodes,
• wherein the at least two electrodes are arranged directly on a bottom side of the functional layer,
• wherein the sensor element is configured to measure a temperature,
• wherein the sensor element is configured for direct integration into an electrical system as a discrete component, and
• wherein the sensor element is designed for direct integration into a MEMS structure and/or into a SESUB structure.