Ferroelectric thin film and forming method thereof
AssigneesSeoul National University R&Db Foundation, Institute for Basic Science
InventorsJungwon Park, Kunwoo Park
Life of this patent
Estimating the term…
Abstract
A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.
Claims10
A method of forming a ferroelectric thin film comprising:
- forming a sacrificial seed layer on a first substrate;
- forming a ferroelectric thin film on the sacrificial seed layer;
- and
- transferring the ferroelectric thin film to a second substrate,
- wherein the first substrate comprises a STO (SrTiQ3) substrate, the sacrificial seed layer comprises a LSMO (La0.7Sr0.3MnO3) layer, and the ferroelectric thin film comprises a HfO2 thin film.
A method of forming a ferroelectric thin film comprising:
- forming a sacrificial seed layer on a first substrate;
- forming a ferroelectric thin film on the sacrificial seed layer;
- and
- transferring the ferroelectric thin film to a second substrate,
- wherein the crystal structure of the ferroelectric thin film is controlled by the thickness of the ferroelectric thin film.
Dependencies are inferred from the claim text.