Slurry composition for chemical mechanical polishing
AssigneeSamsung Electronics Co., Ltd.
InventorsInkwon Kim, Yearin Byun, Sangkyun Kim, Sanghyun Park, Hyosan Lee, Wonki Hur
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Abstract
A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including a first organic polishing booster including a quaternary amine group; a second organic polishing booster including an amino acid; and a carrier; wherein inorganic polishing particles are not included in the slurry composition or included in an amount of less than 0.01% by weight.
Claims21
A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
- a first organic polishing booster including a quaternary amine group;
- a second organic polishing booster including an amino acid, which changes the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster;
- and
- a carrier;
- wherein inorganic polishing particles are not included in the slurry composition, and
- wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
- a first organic polishing booster including a quaternary amine group, the first organic polishing booster being included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight;
- a second organic polishing booster including an amino acid, the second organic polishing booster being included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight, and the second organic polishing booster changing the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster;
- and
- a surfactant;
- and
- a carrier,
- wherein the slurry composition does not include inorganic polishing particles, and
- wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
A slurry composition for a chemical mechanical polishing (CMP) process for polishing polysilicon, the slurry composition comprising:
- a first organic polishing booster including a quaternary amine group;
- a second organic polishing booster including an amino acid, which changes the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster;
- a surfactant;
- a pH control agent;
- and
- a carrier,
- wherein the slurry composition:
- has a pH value of about 4 to about 11,
- does not include inorganic polishing particles, and
- does not include a dispersion stabilizer for uniform distribution of the inorganic polishing particles, and
- wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
Dependencies are inferred from the claim text.