Flexible and stretchable semiconductor devices with reduced footprints and methods therefor

Abstract

A method of making flexible and stretchable semiconductor devices with reduced footprints can include coating a gate electrode layer having a first composition over an elastomer layer, solidifying a portion of the gate electrode layer by irradiation to form a gate electrode, coating a dielectric layer having a second composition over the gate electrode layer, solidifying a portion of the dielectric layer by the irradiation to form a gate dielectric, coating a semiconductor layer having a third composition over the dielectric layer, solidifying a portion of the semiconductor layer by the irradiation to form a device core, coating a terminal layer having the first composition over the dielectric layer, and solidifying a portion of the terminal layer by the irradiation to form a source electrode and a drain electrode contacting the semiconductor layer.

Dependencies are inferred from the claim text.