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AssigneeSoitec
InventorsPascal Guenard, Ionut Radu
Estimating the term…
A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.
A surface acoustic wave device comprising a layer of piezoelectric material having a transducer on a main front face, arranged on a support substrate of which the coefficient of thermal expansion is less than that of the piezoelectric material, wherein the transducer is arranged in a dielectric encapsulation layer, the dielectric encapsulation layer positioned between the layer of piezoelectric material and the support substrate, the dielectric encapsulation layer contacting the main front face of the layer of the piezoelectric material and a main front face of the support substrate.
A surface acoustic wave device, comprising:
Dependencies are inferred from the claim text.