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US 12,315,683 B2Granted
Structure and methods of forming the structure
OwnerTae Heui Kwonginventor
Life of this patent
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Abstract
Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
Claims20
A device, comprising:
- a region comprising memory;
- and
- a peripheral region disposed adjacent to the region configured to supply at least one voltage to the memory, wherein the peripheral region comprises a capacitor, wherein the capacitor comprises a stacked body characterized with a first stair step feature formed from a plurality of conductive levels and a plurality of dielectric levels.
A method of forming a device, comprising:
- forming a region comprising memory;
- and
- forming a peripheral region adjacent to the region including forming at least one capacitor from a plurality of conductive levels and a plurality of dielectric levels that form one or more stair step features of a stacked body.
A device, comprising:
- a first region comprising memory;
- and
- a second region disposed adjacent to the first region configured to supply at least one voltage to the memory, wherein the second region comprises a first stacked body formation characterized with a first stair step feature formed from a plurality of conductive levels and a plurality of dielectric levels, and wherein the first stacked body formation forms part of a charge pump configured to couple to the memory.
Dependencies are inferred from the claim text.