Resist underlayer film-forming composition

A resist underlayer film-forming composition comprising a solvent and a silicon-free reaction product of a C6-C60 aromatic compound (A) that is at least one member selected from the group consisting of:

• with a compound represented by the following formula (B):
• wherein X denotes an oxygen atom or a nitrogen atom,
• Y denotes a single bond, an oxygen atom or a nitrogen atom,
• X and Y are optionally bonded to each other to form a ring,
• R1, R2, R3 and R4 each independently denote a hydrogen atom, a C1-C20 alkyl group, a C3-C8 cycloalkyl group or a C6-C10 aromatic group,
• R2 is present only when X is a nitrogen atom, and
• R4 is present only when Y is a nitrogen atom,
• wherein two molecules of the aromatic compound (A) having at least one aromatic ring containing carbon atoms are each connected at one of the carbon atoms of the at least one aromatic ring of the aromatic compound (A) through the two carbon atoms of the carbon-carbon double bond in the compound represented by formula (B).