Optoelectronic device and method of manufacture thereof

An optoelectronic device, comprising:

• a silicon-on-insulator platform, including a silicon waveguide formed in a silicon device layer, a silicon substrate, and a cavity;
• and
• a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is optically coupled to the silicon waveguide,
• wherein a region of a bed of the cavity, located between the III-V semiconductor based device and the silicon substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device, and
• wherein the region of the bed of the cavity includes an intermediate structure, and wherein the patterned surface is provided on the intermediate structure.

An optoelectronic device, comprising:

• a silicon-on-insulator platform, including a silicon waveguide formed in a silicon device layer, a silicon substrate, and a cavity;
• and
• a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is optically coupled to the silicon waveguide,
• wherein a region of a bed of the cavity, located between the III-V semiconductor based device and the silicon substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device, and
• wherein the bed of the cavity is formed of a dielectric, and the patterned surface is formed within the dielectric.