Read-only memory with vertical transistors
AssigneeInternational Business Machines Corporation
InventorTenko Yamashita
Life of this patent
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Abstract
Provided is a read-only memory (ROM) device. The ROM device comprises a substrate that has a plurality of vertical transport field effect transistors (VFETs). The ROM device further comprises an un-activated semiconductor layer provided on each VFET. The un-activated semiconductor layer includes implanted dopants that have not been substantially activated.
Claims8
A method of programming a ROM device, the method comprising:
- determining a value to be programmed into each of a plurality of ROM cells in a ROM device, wherein each ROM cell comprises a vertical transport field effect transistor (VFET), a respective un-activated semiconductor layer upon the VFET, a deterioration barrier upon sidewall(s) of the un-active semiconductor layer, and a conductive contact upon the deterioration barrier, wherein the un-activated semiconductor layer includes chemical dopants that have not been substantially activated;
- and
- applying an activation voltage to respective conductive contacts of a first set of one or more ROM cells to activate chemical dopants implanted in the respective un-activated semiconductor layers, wherein activation of the chemical dopants changes a resistance of the first set of one or more ROM cells to program the first set of one or more ROM cells to respectively store a first value, and wherein a second set of one or more ROM cells to which the activation voltage is not applied are programmed to store a second value.
A system for programming a ROM device, wherein the system comprises a processor configured to perform a method comprising:
- determining a value to be programmed into each of a plurality of ROM cells in a ROM device, wherein each ROM cell comprises a vertical transport field effect transistor (VFET), a respective un-activated semiconductor layer upon the VFET, a deterioration barrier upon sidewall(s) of the un-activated semiconductor layer, and a conductive contact upon the deterioration barrier, wherein the un-active semiconductor layer includes chemical dopants that have not been substantially activated;
- and
- applying an activation voltage to respective conductive contacts of a first set of one or more ROM cells to activate chemical dopants implanted in the respective un-activated semiconductor layers, wherein activation of the chemical dopants changes a resistance of the first set of one or more ROM cells to program the first set of one or more ROM cells to respectively store a first value, and wherein a second set of one or more ROM cells to which the activation voltage is not applied are programmed to store a second value.
A computer program product comprising one or more computer readable storage media having program instructions embodied therewith, the program instructions executable by a processor to perform a method comprising:
- determining a value to be programmed into each of a plurality of ROM cells in a ROM device, wherein each ROM cell comprises a vertical transport field effect transistor (VFET), a respective un-activated semiconductor layer upon the VFET, a deterioration barrier upon sidewall(s) of the un-activated semiconductor layer, and a conductive contact upon the deterioration barrier, wherein the un-active semiconductor layer includes chemical dopants that have not been substantially activated;
- and
- applying an activation voltage to respective conductive contacts of a first set of one or more ROM cells to activate chemical dopants implanted in the respective un-activated semiconductor layers, wherein activation of the chemical dopants changes a resistance of the first set of one or more ROM cells to program the first set of one or more ROM cells to respectively store a first value, and wherein a second set of one or more ROM cells to which the activation voltage is not applied are programmed to store a second value.
Dependencies are inferred from the claim text.