Visible light-emitting semiconductor laser device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMaxim Vladimirovich Ryabko, Alexey Andreevich Shchekin, Aleksandr Sergeevich Shorokhov
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Abstract
A semiconductor laser light-emitting structure includes a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure and configured to emit light having a first wavelength, and a wavelength converter including a metasurface and monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure, wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.
Claims18
A semiconductor laser device comprising:
- a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure, the semiconductor laser light-emitting structure being configured to emit light having a first wavelength;
- a wavelength converter comprising a metasurface, the wavelength converter being monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure;
- and
- an air gap between the metasurface and the semiconductor laser light-emitting structure,
- wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.
A semiconductor laser device comprising:
- a substrate;
- a semiconductor laser light-emitting structure comprising:
- a lower distributed Bragg reflector layer,
- a first-type conductive semiconductor contact layer,
- an active area layer, and
- a second-type conductive semiconductor contact layer, which are sequentially stacked on the substrate, wherein the semiconductor laser light-emitting structure comprises a vertical-cavity surface-emitting laser structure configured to emit infrared light;
- a metasurface comprising a plurality of nanoresonators, each of the plurality of nanoresonators having an asymmetric cross-sectional shape, the metasurface being provided on the second-type conductive semiconductor contact layer and configured to non-linearly convert the infrared light into visible light;
- and
- an air gap between the metasurface and the semiconductor laser light-emitting structure,
- wherein each of the semiconductor laser light-emitting structure and the metasurface comprises a Group III-V semiconductor compound, and
- wherein the metasurface is monolithically integrated with the semiconductor laser light-emitting structure.
Dependencies are inferred from the claim text.