Method of processing substrate
AssigneeTes Co., Ltd
InventorsBong-Soo Kwon, Se-Woong Bae, Eun-Jin Song
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Abstract
There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.
Claims15
A method of processing a substrate comprising an oxide-nitride-oxide stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate, comprising:
- (a) primarily dry-etching silicon nitride layers of the oxide-nitride-oxide stack;
- (b) producing oxygen radicals and processing silicon oxide layers of the oxide-nitride-oxide stack with the oxygen radicals after the primarily dry-etching the silicon nitride layers;
- and
- (c) secondarily dry-etching the silicon nitride layers of the oxide-nitride-oxide stack,
- wherein in steps (a) and (c), a plurality of gases are plasmatized to etch the silicon nitride layer, the plurality of gases including a first gas containing CF4 and a second gas containing hydrogen.
A method of processing a substrate comprising an oxide-nitride-oxide stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate, comprising:
- (a) dry-etching silicon nitride layers of the oxide-nitride-oxide stack m times, wherein m is a natural number greater than or equal to 2;
- and
- (b) dry-etching silicon nitride layers of the oxide-nitride-oxide stack n times, wherein n is a natural number greater than or equal to 2,
- wherein step (a) includes one or more oxygen radical processing steps of processing silicon oxide layers of the oxide-nitride-oxide stack with oxygen radicals between primary dry etching and secondary dry etching of the m times,
- wherein step (b) includes one or more oxygen radical processing steps of processing silicon oxide layers of the oxide-nitride-oxide stack with oxygen radicals between primary dry etching and secondary dry etching of the n times, and
- wherein the dry etching of step (a) and the dry etching of step (b) include plasmatizing a plurality of gases and etching the silicon nitride layers, the plurality of gases including a first gas containing CF4 and a second gas containing hydrogen.
Dependencies are inferred from the claim text.