Lattice matched photocathodes for extended wavelengths
AssigneeL3Harris Technologies, Inc.
InventorsBed Pantha, Jacob J. Becker, Jon D. Burnsed
Life of this patent
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Abstract
A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.
Claims20
A photocathode epitaxial structure comprising:
- a binary compound substrate material;
- and
- an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material, the active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system;
- and
- a selective barrier layer deposited on the active device absorber layer configured to act as a barrier for thermally generated electrons while freely passing energetic photogenerated electrons, wherein a thickness of the selective barrier layer is less than or equal to 10 nm.
A method of forming a photocathode absorber, the method comprising:
- on a binary compound substrate material, forming an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material, the active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in a photocathode of a nightvision system;
- and
- forming a selective barrier layer on the active device absorber layer that is configured to act as a barrier for thermally generated electrons while freely passing energetic photogenerated electrons, wherein a thickness of the selective barrier layer is less than or equal to 10 nm.
Dependencies are inferred from the claim text.