Random swap injection
AssigneeKepler Computing Inc.
InventorsChristopher B. Wilkerson, Sasikanth Manipatruni, Rajeev Kumar Dokania, Amrita Mathuriya
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AssigneeKepler Computing Inc.
InventorsChristopher B. Wilkerson, Sasikanth Manipatruni, Rajeev Kumar Dokania, Amrita Mathuriya
Estimating the term…
Endurance mechanisms are introduced for memories such as non-volatile memories for broad usage including caches, last-level cache(s), embedded memory, embedded cache, scratchpads, main memory, and storage devices. Here, non-volatile memories (NVMs) include magnetic random-access memory (MRAM), resistive RAM (ReRAM), ferroelectric RAM (FeRAM), phase-change memory (PCM), etc. In some cases, features of endurance mechanisms (e.g., randomizing mechanisms) are applicable to volatile memories such as static random-access memory (SRAM), and dynamic random-access memory (DRAM). The endurance mechanisms include a wear leveling scheme that uses index rotation, outlier compensation to handle weak bits, and random swap injection to mitigate wear out attacks.
An apparatus comprising:
An apparatus comprising:
A system comprising:
Dependencies are inferred from the claim text.