Treatment liquid and pattern forming method
AssigneeFUJIFILM Corporation
InventorsHideaki Tsubaki, Toru Tsuchihashi, Wataru Nihashi, Kei Yamamoto
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AssigneeFUJIFILM Corporation
InventorsHideaki Tsubaki, Toru Tsuchihashi, Wataru Nihashi, Kei Yamamoto
Estimating the term…
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.
A rinsing liquid for patterning a resist film,
Dependencies are inferred from the claim text.