Methods of producing single-layer transition metal selenide
AssigneeCity University of Hong Kong
InventorsThuc Hue Ly, Ping Man, Ka Ho Leung
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a method of producing a substrate having a single-layer transition metal selenide (TMS) nanoflakes deposited thereon. The method is characterized in not using hydrogen as a reducing agent during the deposition of monolayer TMS nanoflakes on the substrate. Such substrates may serve as an optic, an electronic device, a mechanic, a sensor etc.
Claims15
A method of producing a substrate having a single-layer transition metal selenide (TMS) nanoflakes deposited thereon in a reaction chamber, in which the reaction chamber has a tubular body, and first and second containers disposed in the tubular body, the method comprises,
- (a) spin-coating the substrate with a transition metal source solution;
- (b) respectively placing a selenium source and a reducing agent in the first and second containers, in which the reducing agent is a metal and not hydrogen gas;
- (c) placing the substrate of step (a) above the second container with the spin-coated side of the substrate facing the reducing agent housed therein;
- (d) purging the reaction chamber with an inert gas, in which the inert gas flows from the first container towards the second container;
- (e) subjecting the reaction chamber in a heating program, in which the temperature in the first container is raised from room temperature to 400° C. in 20 minutes and kept for 15 minutes, while the temperature in the second container is raised from room temperature to 750-900° C. in 25 minutes and kept for 5-15 minutes;
- (f) allowing the temperature of the second container to cool down to 500° C.;
- and
- (g) cooling the reaction chamber to room temperature thereby depositing the single-layer TMS nanoflakes on the substrate.
Dependencies are inferred from the claim text.